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Photoluminescence from low temperature grown quantum dots
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10.1063/1.2713803
/content/aip/journal/apl/90/11/10.1063/1.2713803
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/11/10.1063/1.2713803

Figures

Image of FIG. 1.
FIG. 1.

Photoluminescence from LT grown QDs at a temperature of and a high excitation density.

Image of FIG. 2.
FIG. 2.

Temperature dependence of the PL spectrum for sample R198 showing rapid quenching of the PL from the LT-QDs with increasing temperature.

Image of FIG. 3.
FIG. 3.

Excitation energy dependence on PL efficiency showing an unexpected increase of the QD PL efficiency when exciting below the GaAs band gap directly into the QD layer.

Tables

Generic image for table
Table I.

Growth details of the samples. All samples have thick GaAs buffer layer grown at , a lower LT-GaAs barrier layer of , and a capping layer of LT-GaAs, both grown at .

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/content/aip/journal/apl/90/11/10.1063/1.2713803
2007-03-14
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Photoluminescence from low temperature grown InAs∕GaAs quantum dots
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/11/10.1063/1.2713803
10.1063/1.2713803
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