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Photoluminescence from LT grown QDs at a temperature of and a high excitation density.
Temperature dependence of the PL spectrum for sample R198 showing rapid quenching of the PL from the LT-QDs with increasing temperature.
Excitation energy dependence on PL efficiency showing an unexpected increase of the QD PL efficiency when exciting below the GaAs band gap directly into the QD layer.
Growth details of the samples. All samples have thick GaAs buffer layer grown at , a lower LT-GaAs barrier layer of , and a capping layer of LT-GaAs, both grown at .
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