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Schematic view of the device structure of an undoped -channel GaAs heterostructure transistor. The “+” signs denote the capacitively induced 2D hole layer.
vs measured at . increases with and saturates for . Inset: vs . is linearly dependent on , with an effective capacitance of . The density is determined from quantum oscillations in the longitudinal magnetoresistance.
(Color online) (a) Magnetoresistance at different densities at . Curves are shifted vertically for clarity. The dotted lines represent the base lines for the top two traces, respectively. (b) IQHEs and FQHEs at . The gate voltage is converted to the density and the filling factor using the effective capacitance.
vs . A threshold voltage of is observed, above which no current flows. Inset: Drain-source current-voltage characteristics.
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