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Undoped high mobility two-dimensional hole-channel heterostructure field-effect transistors with atomic-layer-deposited dielectric
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10.1063/1.2714094
/content/aip/journal/apl/90/11/10.1063/1.2714094
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/11/10.1063/1.2714094
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic view of the device structure of an undoped -channel GaAs heterostructure transistor. The “+” signs denote the capacitively induced 2D hole layer.

Image of FIG. 2.
FIG. 2.

vs measured at . increases with and saturates for . Inset: vs . is linearly dependent on , with an effective capacitance of . The density is determined from quantum oscillations in the longitudinal magnetoresistance.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Magnetoresistance at different densities at . Curves are shifted vertically for clarity. The dotted lines represent the base lines for the top two traces, respectively. (b) IQHEs and FQHEs at . The gate voltage is converted to the density and the filling factor using the effective capacitance.

Image of FIG. 4.
FIG. 4.

vs . A threshold voltage of is observed, above which no current flows. Inset: Drain-source current-voltage characteristics.

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/content/aip/journal/apl/90/11/10.1063/1.2714094
2007-03-16
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Undoped high mobility two-dimensional hole-channel GaAs∕AlxGa1−xAs heterostructure field-effect transistors with atomic-layer-deposited dielectric
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/11/10.1063/1.2714094
10.1063/1.2714094
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