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Energy diagram and charge distribution of an InAs channel heterostructure. The distance from the top surface is denoted by .
Shubnikov–de Haas (SdH) oscillations for channel widths ranging from . Arrows indicate the node positions in the beat patterns.
Channel width dependence of the spin splitting energy and the spin distribution probability.
Channel width dependence of the spin-orbit interaction parameter and the total carrier concentration including spin up and down.
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