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Phase transition of ultrathin AlN interlayer at interface
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10.1063/1.2711379
/content/aip/journal/apl/90/12/10.1063/1.2711379
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/12/10.1063/1.2711379
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) SEM plan view of the dodecagonal pinhole in the surface of the AlGaN film. Schematics of the side view (left) and plan view (right) illustrating the formation of the pinhole in GaN basal layers (b) and in AlGaN film (c).

Image of FIG. 2.
FIG. 2.

(a) Bright field TEM image of the pinhole, where region I is the AlGaN layer and region II corresponds to the interfacial layers of represents the Al mole fraction determined by EDX. (b) Schematic diagram of the geometry for the pinhole in (a). (c) Selected area electron diffraction pattern from region I for [0001] orientation. Besides the hexagonal pattern an extra set of spots can be observed. (d) Extra pattern extracted from (c), which is a ZB [110] pattern of AlN.

Image of FIG. 3.
FIG. 3.

Structural transition of AlGaN thin film from WZ (a) to ZB (c) on GaN basal layers. (b) and (d) show the top views of configurations (a) and (c), respectively. The dotted and dash lines exhibit the symmetry change during the structural transition.

Image of FIG. 4.
FIG. 4.

Average transition energy of thin film as a function of compressive strain . Curve (a) for system with and (b) for . Negative represents the energetically preference of ZB phase.

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/content/aip/journal/apl/90/12/10.1063/1.2711379
2007-03-21
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Phase transition of ultrathin AlN interlayer at AlGaN∕GaN interface
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/12/10.1063/1.2711379
10.1063/1.2711379
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