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Heteroepitaxial growth of sixfold symmetric osmium on Si (111) and Si (100)
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10.1063/1.2711658
/content/aip/journal/apl/90/12/10.1063/1.2711658
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/12/10.1063/1.2711658
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) XRD pattern of Os grown on Cu (002)/Si (100) showing clear Os (0002) peak. The inset panel of the figure is the XRD scan results of . A four-fold symmetric diffraction pattern of Cu {111} and a 12-fold symmetric diffraction pattern of Os were observed. (b) Illustration of the relationships between Os (0002) and Cu (002).

Image of FIG. 2.
FIG. 2.

(Color online) XRD pattern of Os with buffer layer on Si (111) and the XRD scan results (inset) indicating that the Os film is a good six-fold symmetric [Os (0002)] structure.

Image of FIG. 3.
FIG. 3.

High magnification TEM cross-sectional images of (a) the Os (0002)/Cu (002) interface and (b) the Os (0002)/Cu (111) interface. The growth direction is indicated by arrows. The insets of both figures are the TEM electron diffraction pattern of the interface.

Image of FIG. 4.
FIG. 4.

(Color online) Illustration of uses of the multifunction Os that has the potential to be applied in the ULSI MTJ processes.

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/content/aip/journal/apl/90/12/10.1063/1.2711658
2007-03-19
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Heteroepitaxial growth of sixfold symmetric osmium on Si (111) and Si (100)
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/12/10.1063/1.2711658
10.1063/1.2711658
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