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(a) Typical XRD spectrum of MOCVD-grown InN nanobelts. The inset shows low-magnification SEM image of InN nanobelts. (b) High-magnification SEM image of a single InN nanobelt with well-defined facets and the observation of metallic nanoparticles attached at the growth front ends of InN nanobelts (inset.)
(a) Low-magnification TEM image of a single InN nanobelt. (b) HRTEM image of InN nanobelt and corresponding selected area diffraction pattern (inset) of taken from the  zone axis. (c) Schematic diagram of the nanobelt crystallographic directions.
Excitation power dependence of the emission spectra of InN nanobelts grown on Si substrates taken at . Excitation power was increased from 10, 19, 29, 39, and for spectra (I), II, III, IV, and (V), respectively. The inset shows the integrated intensity as a function of excitation intensity.
(a) Power-dependent PL spectra of InN nanobelts grown on SiN coated Si substrates recorded at with excitation intensities of 39, 50, 62, 73, and for PL spectra (I), II, III, IV, and (V), respectively. The inset shows the integrated intensity under different excitation intensities. (b) Linewidth of the emission peak as a function of excitation intensity. (c) Lasing spectrum obtained at different sites of the same sample as (a) at the excitation intensity of .
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