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Predictions of thermoelastic stress in a broad-area semiconductor laser
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10.1063/1.2714330
/content/aip/journal/apl/90/12/10.1063/1.2714330
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/12/10.1063/1.2714330
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Graph of the steady-state temperature rise of the active region along the mirror facet at .

Image of FIG. 2.
FIG. 2.

Two-dimensional contour plot of the active region temperature rise at steady state for a lateral width. The region close to the facet at has been blown up to highlight the local hot spots.

Image of FIG. 3.
FIG. 3.

Two-dimensional contour plot of the steady-state electron concentration in the vicinity of the reverse mirror facet. The electron concentration is measured in units of .

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/content/aip/journal/apl/90/12/10.1063/1.2714330
2007-03-19
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Predictions of thermoelastic stress in a broad-area semiconductor laser
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/12/10.1063/1.2714330
10.1063/1.2714330
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