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Resistance switching of copper doped films for nonvolatile memory applications
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10.1063/1.2715002
/content/aip/journal/apl/90/12/10.1063/1.2715002
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/12/10.1063/1.2715002
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Hysteretic-type switching behaviors in the memory window from critical positive set voltage to negative reset voltage. characteristics at RT in double logarithmic plots in the positive-voltage region (b) and in the negative-voltage region (c). Note that the absolute values of current and voltage are obtained from both origins.

Image of FIG. 2.
FIG. 2.

times of endurance test of by voltage pulses. (b) Retention properties of and at RT and .

Image of FIG. 3.
FIG. 3.

XPS depth profiling of film. More than 5% copper is diffused into film from the copper substrate.

Image of FIG. 4.
FIG. 4.

(a) Spreading resistance image measured by the conducting AFM at low resistance state. (b) Spreading resistance image at high resistance state.

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/content/aip/journal/apl/90/12/10.1063/1.2715002
2007-03-20
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Resistance switching of copper doped MoOx films for nonvolatile memory applications
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/12/10.1063/1.2715002
10.1063/1.2715002
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