1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Effect of processing temperature on high field critical current density and upper critical field of nanocarbon doped
Rent:
Rent this article for
USD
10.1063/1.2715026
/content/aip/journal/apl/90/12/10.1063/1.2715026
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/12/10.1063/1.2715026

Figures

Image of FIG. 1.
FIG. 1.

Dependence of at and on sintering temperature for nano-SiC and nano-C doped wires, as well as pure wire.

Image of FIG. 2.
FIG. 2.

vs for undoped, SiC doped, and C doped wires sintered at various temperatures.

Image of FIG. 3.
FIG. 3.

Microstructure analysis for the carbon-substituted sintered at 700 and for (a) and (b), respectively.

Tables

Generic image for table
Table I.

Superconducting properties as a function of reaction temperature for nanocarbon doped samples with nominal composition as .

Loading

Article metrics loading...

/content/aip/journal/apl/90/12/10.1063/1.2715026
2007-03-20
2014-04-19
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of processing temperature on high field critical current density and upper critical field of nanocarbon doped MgB2
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/12/10.1063/1.2715026
10.1063/1.2715026
SEARCH_EXPAND_ITEM