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Dependence of at and on sintering temperature for nano-SiC and nano-C doped wires, as well as pure wire.
vs for undoped, SiC doped, and C doped wires sintered at various temperatures.
Microstructure analysis for the carbon-substituted sintered at 700 and for (a) and (b), respectively.
Superconducting properties as a function of reaction temperature for nanocarbon doped samples with nominal composition as .
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