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Investigations of enhanced device characteristics in pentacene-based field effect transistors with sol-gel interfacial layer
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10.1063/1.2715030
/content/aip/journal/apl/90/12/10.1063/1.2715030
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/12/10.1063/1.2715030

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Output characteristics of pentacene-based OFETs (, in steps of ) with (a) thermally grown (TOX-OFET)—please note that the has been multiplied by 10 so that the graph can be clearly viewed—and (b) sol-gel silica on thermally grown (bilayer dielectric, SG-OFET). AFM images of pentacene films on (c) TOX and (d) sol-gel silica clearly show an increased grain size for the pentacene on sol-gel silica films.

Image of FIG. 2.
FIG. 2.

(Color online) Transfer characteristics, (∝ transconductance), and channel conductance plots for TOX-OFET and SG-OFETs indicate improved device characteristics for SG-OFETs and also an independence on the thickness of the sol-gel silica film.

Image of FIG. 3.
FIG. 3.

(Color online) Localized charge densities of pentacene film on the TOX and sol-gel silica (bilayer gate dielectrics) show reduced localized charge states for different sol-gel thicknesses as compared with the reference TOX. Inset: Frequency dependence of the measured at biasing voltage of (ac amplitude of ).

Tables

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Table I.

Device characteristics of TOX-OFET and SG-OFETs.

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/content/aip/journal/apl/90/12/10.1063/1.2715030
2007-03-22
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Investigations of enhanced device characteristics in pentacene-based field effect transistors with sol-gel interfacial layer
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/12/10.1063/1.2715030
10.1063/1.2715030
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