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High-pressure and high-temperature annealing as an activation method for ion-implanted dopants in diamond
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10.1063/1.2715034
/content/aip/journal/apl/90/12/10.1063/1.2715034
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/12/10.1063/1.2715034
/content/aip/journal/apl/90/12/10.1063/1.2715034
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/content/aip/journal/apl/90/12/10.1063/1.2715034
2007-03-19
2014-11-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High-pressure and high-temperature annealing as an activation method for ion-implanted dopants in diamond
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/12/10.1063/1.2715034
10.1063/1.2715034
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