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High-pressure and high-temperature annealing as an activation method for ion-implanted dopants in diamond
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10.1063/1.2715034
/content/aip/journal/apl/90/12/10.1063/1.2715034
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/12/10.1063/1.2715034
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

SIMS depth profile of B concentration in the diamond film before and after HPHT annealing at and (dose: , ).

Image of FIG. 2.
FIG. 2.

(a) Typical CL spectra of the as-grown film, the same film after B implantation, and the same film after HPHT annealing (, ) measured at . (b) Annealing temperature dependence of intensity ratio of the B-implanted diamond film after HPHT annealing.

Image of FIG. 3.
FIG. 3.

(a) Temperature dependence of hole concentration of the B-implanted diamond film after HPHT annealing at 1200, 1300, and . The averaged cubic hole concentration was calculated from sheet hole concentration divided by total CVD homoepitaxial layer thickness. The dotted lines are best-fitted curves, assuming Eq. (1). (b) Annealing temperature dependence of doping efficiency of B-implanted diamond films after HPHT annealing and conventional thermal annealing.

Image of FIG. 4.
FIG. 4.

Temperature dependence of sheet hole concentration and mobility of the B-implanted diamond film after HPHT annealing at . The dotted lines are the best-fitted curves, assuming Eq. (1).

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/content/aip/journal/apl/90/12/10.1063/1.2715034
2007-03-19
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High-pressure and high-temperature annealing as an activation method for ion-implanted dopants in diamond
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/12/10.1063/1.2715034
10.1063/1.2715034
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