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(a) Chemical structure of F4-TCNQ and DH6T. (b) SECO (left side) and valence region photoemission spectrum (right side) for DH6T with increasing coverage on F4-TCNQ precovered Ag(111). “” is the spectrum of the F4-TCNQ precovered substrate. Closed symbols mark HOMO and HOMO-1 of L1. Open symbol mark the same features for L2. (c) Same as (b) for F4-TCNQ precoverage.
(a) Growth model and (b) interface electronic structure model for DH6T/Ag(111) (left side) and DH6T/(thick)F4-TCNQ/Ag(111) (right side). L1 indicates monolayer DH6T, L2 multilayer DH6T, vacuum level, Fermi level, the work function shift, the HOMO shift, symbolizes the slightly charged L2, and F4 means F4-TCNQ.
(a) UPS spectra of DH6T/Au (upper spectra) and DH6T on F4-TCNQ/Au (bottom spectra), is the DH6T layer thickness, and the arrows indicate the HOMO onset. (b) Hole injection barrier and vacuum level shift (referenced to the vacuum level of pristine Au) of a monolayer (filled squares) and multilayer (open circles) DH6T on F4-TCNQ/Au films as function of F4-TCNQ precoverage thickness . The dashed lines symbolize the boundary between the different pinning regimes.
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