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Fabrication and device characteristics of Schottky-type bulk GaN-based “visible-blind” ultraviolet photodetectors
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10.1063/1.2715114
/content/aip/journal/apl/90/12/10.1063/1.2715114
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/12/10.1063/1.2715114
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Dark current-voltage characteristics for Schottky photodetectors with as-deposited and annealed Schottky contacts.

Image of FIG. 2.
FIG. 2.

Spectral response as a function of wavelength.

Image of FIG. 3.
FIG. 3.

Plot of photocurrent vs optical power density.

Image of FIG. 4.
FIG. 4.

characteristics for dark current measurement and photocurrent measurement under broadband UV illumination.

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/content/aip/journal/apl/90/12/10.1063/1.2715114
2007-03-21
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fabrication and device characteristics of Schottky-type bulk GaN-based “visible-blind” ultraviolet photodetectors
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/12/10.1063/1.2715114
10.1063/1.2715114
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