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Carrier capture dynamics of quantum dots
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10.1063/1.2715115
/content/aip/journal/apl/90/12/10.1063/1.2715115
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/12/10.1063/1.2715115

Figures

Image of FIG. 1.
FIG. 1.

Amplified spontaneous emission as a function of bias level for the QD device. The currents were 25, 50, 100, 125, 150, and .

Image of FIG. 2.
FIG. 2.

Pump induced gain change as a function of pump-probe delay showing the biexponential behavior. The amplifier bias was .

Image of FIG. 3.
FIG. 3.

Plot of dot capture time as a function of bias current showing the power law behavior. The fitted exponent is .

Image of FIG. 4.
FIG. 4.

Plot of calculated dot capture time using Eq. (1) as a function of bias current (thin line). Note that for high pump, the graph displays a power law behavior with a fitted exponent of . The parameters of the model were , , , and .

Tables

Generic image for table
Table I.

Dot capture time as a function of for Eq. (1) using a linear stability analysis technique.

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/content/aip/journal/apl/90/12/10.1063/1.2715115
2007-03-20
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Carrier capture dynamics of InAs∕GaAs quantum dots
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/12/10.1063/1.2715115
10.1063/1.2715115
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