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(Color online) Percentage increase of transconductance vs channel length for different splits of samples with respect to the control ones. Each datum point represents the mean measurement value from six devices. Inset: capacitance-voltage characteristics for all splits. Basically all curves are identical, indicating the transconductance increase is not caused by the oxide thickness difference among all splits.
(Color online) Substrate current vs gate voltage for different splits with channel width/length of .
(Color online) shift as a function of stress time. Devices with channel width/length of were stressed at , and of maximum substrate current. Each datum point represents the mean measurement value from three devices.
(Color online) (a) In SiN-capped devices, a large amount of hydrogen species from the SiN layer diffuse to the gate oxide layer and the channel region through three possible pathways denoted as A1, A2, and A3. (b) In BL-POLY devices, the diffusion of hydrogen species from SiN is suppressed by the poly-Si buffer layer.
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