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Observation of negative bias stressing interface trapping centers in metal gate hafnium oxide field effect transistors using spin dependent recombination
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10.1063/1.2715141
/content/aip/journal/apl/90/12/10.1063/1.2715141
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/12/10.1063/1.2715141
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Comparison of dc results for an unstressed device, a device subjected to a room temperature stress ( at ), and a device subjected to extended stressing at an elevated temperature ( at for ).

Image of FIG. 2.
FIG. 2.

SDR results for an unstressed and room temperature negative bias stressed device ( and ). SDR was performed on this device with a gate voltage of . The of 1.9998 corresponds to a microwave frequency and magnetic field .

Image of FIG. 3.
FIG. 3.

SDR results for an unstressed and high temperature stressed ( at for ) device. Note that the long term high temperature stressing creates a significantly different SDR response than the brief room temperature stressing. SDR was performed on this device with a gate voltage of . The of 2.0026 corresponds to a microwave frequency and magnetic field .

Image of FIG. 4.
FIG. 4.

Comparison of SDR traces on long term stressed , , and PNO devices. The value of the long term stress is very similar to that of the PNO stressed device though it is clear that the signals are not the same. The equivalent oxide thicknesses of the device were 75 and for the plasma nitrided device.

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/content/aip/journal/apl/90/12/10.1063/1.2715141
2007-03-19
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Observation of negative bias stressing interface trapping centers in metal gate hafnium oxide field effect transistors using spin dependent recombination
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/12/10.1063/1.2715141
10.1063/1.2715141
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