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Role of gross well-width fluctuations in bright, green-emitting single quantum well structures
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10.1063/1.2715166
/content/aip/journal/apl/90/12/10.1063/1.2715166
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/12/10.1063/1.2715166
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Cross-section STEM-HAADF image of a commercial green LED showing gross thickness variations (arrowed) in all four InGaN QWs.

Image of FIG. 2.
FIG. 2.

AFM images of (a) a temperature-bounced InGaN epilayer and (b) an InGaN epilayer annealed at a single temperature; both show a network of interlinking InGaN strips, aligned roughly parallel to the direction.

Image of FIG. 3.
FIG. 3.

(a) STEM-HAADF cross-section image of the annealed epilayer viewed along the zone axis. The electron probe diameter was approximately . The arrows indicate the probe positions for EDX analyses of the In:Ga ratio, as plotted in (b).

Image of FIG. 4.
FIG. 4.

Bright-field TEM images of an annealed InGaN epilayer taken on the family of zone axes showing five TDs projected in three different directions. The arrows indicate where the TDs terminate at the surface. Scale .

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/content/aip/journal/apl/90/12/10.1063/1.2715166
2007-03-21
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Role of gross well-width fluctuations in bright, green-emitting single InGaN∕GaN quantum well structures
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/12/10.1063/1.2715166
10.1063/1.2715166
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