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Cross-section STEM-HAADF image of a commercial green LED showing gross thickness variations (arrowed) in all four InGaN QWs.
AFM images of (a) a temperature-bounced InGaN epilayer and (b) an InGaN epilayer annealed at a single temperature; both show a network of interlinking InGaN strips, aligned roughly parallel to the direction.
(a) STEM-HAADF cross-section image of the annealed epilayer viewed along the zone axis. The electron probe diameter was approximately . The arrows indicate the probe positions for EDX analyses of the In:Ga ratio, as plotted in (b).
Bright-field TEM images of an annealed InGaN epilayer taken on the family of zone axes showing five TDs projected in three different directions. The arrows indicate where the TDs terminate at the surface. Scale .
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