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Cross-sectional dark-field image of layers with different amounts of Er. The image was recorded close to ⟨110⟩ using the reflection. The contrast variations across the image are due to bending of the TEM foil. The growth direction is approximately from the lower left to the upper right of the image.
(a) Cross-sectional HAADF/STEM image along one of the ⟨110⟩ directions of the top two layers of the sample with 6% ErAs. The inset is a Fourier transform of the image. (b) Cross-sectional HAADF/STEM image in the perpendicular ⟨110⟩ direction.
Schematic model of the ordering of ErAs particles in InGaAs layers. The viewing direction in Fig. 2(a) is parallel to the channels and perpendicular to them in Fig. 2(b). The ErAs particles show a strong preference for being located on planes and a somewhat less pronounced preference for being located exactly in the troughs and peaks (i.e., the intersections of these planes).
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