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TEM micrograph of a single nanowire channel of the NW SONOS-TFT.
Comparison of transfer characteristics of the SC and the NW SONOS-TFTs.
(a) Programing and (b) erasing characteristics of devices for NW and SC structures.
(a) Retention characteristics of devices with NW and SC structures and (b) band diagram of SONOS-TFT during program operation.
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