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Nonvolatile polycrystalline silicon thin-film-transistor memory with oxide/nitride/oxide stack gate dielectrics and nanowire channels
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10.1063/1.2715443
/content/aip/journal/apl/90/12/10.1063/1.2715443
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/12/10.1063/1.2715443
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

TEM micrograph of a single nanowire channel of the NW SONOS-TFT.

Image of FIG. 2.
FIG. 2.

Comparison of transfer characteristics of the SC and the NW SONOS-TFTs.

Image of FIG. 3.
FIG. 3.

(a) Programing and (b) erasing characteristics of devices for NW and SC structures.

Image of FIG. 4.
FIG. 4.

(a) Retention characteristics of devices with NW and SC structures and (b) band diagram of SONOS-TFT during program operation.

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/content/aip/journal/apl/90/12/10.1063/1.2715443
2007-03-20
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nonvolatile polycrystalline silicon thin-film-transistor memory with oxide/nitride/oxide stack gate dielectrics and nanowire channels
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/12/10.1063/1.2715443
10.1063/1.2715443
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