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Nonvolatile polycrystalline silicon thin-film-transistor memory with oxide/nitride/oxide stack gate dielectrics and nanowire channels
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10.1063/1.2715443
/content/aip/journal/apl/90/12/10.1063/1.2715443
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/12/10.1063/1.2715443
/content/aip/journal/apl/90/12/10.1063/1.2715443
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/content/aip/journal/apl/90/12/10.1063/1.2715443
2007-03-20
2014-10-31
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nonvolatile polycrystalline silicon thin-film-transistor memory with oxide/nitride/oxide stack gate dielectrics and nanowire channels
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/12/10.1063/1.2715443
10.1063/1.2715443
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