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Lateral epitaxial overgrowth of aluminum nitride on patterned silicon carbide substrates by hydride vapor phase epitaxy
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10.1063/1.2716068
/content/aip/journal/apl/90/12/10.1063/1.2716068
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/12/10.1063/1.2716068
/content/aip/journal/apl/90/12/10.1063/1.2716068
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/content/aip/journal/apl/90/12/10.1063/1.2716068
2007-03-23
2014-07-30
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Lateral epitaxial overgrowth of aluminum nitride on patterned silicon carbide substrates by hydride vapor phase epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/12/10.1063/1.2716068
10.1063/1.2716068
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