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Lateral epitaxial overgrowth of aluminum nitride on patterned silicon carbide substrates by hydride vapor phase epitaxy
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10.1063/1.2716068
/content/aip/journal/apl/90/12/10.1063/1.2716068
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/12/10.1063/1.2716068
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Figures

Image of FIG. 1.
FIG. 1.

Scanning electron micrographs of laterally grown AlN films. (a) Cross-sectional image of an AlN film grown on a patterned SiC substrate containing wide mesas and wide trench regions. The dotted lines outline the profiles of the SiC mesas. (b) Perspective view cross-sectional image of an AlN film grown on a SiC substrate containing wide mesas and wide trench regions.

Image of FIG. 2.
FIG. 2.

Cross-sectional TEM image of an AlN film observed with diffraction conditions to observe edge-type threading dislocations. The white spot in the lower right part of the image is the result of excessive sample thinning during sample preparation by ion beam milling.

Image of FIG. 3.
FIG. 3.

Plan-view TEM image of an AlN film observed with diffraction conditions showing a substantially reduced threading dislocation density in the laterally grown wing region as compared to the seed region.

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/content/aip/journal/apl/90/12/10.1063/1.2716068
2007-03-23
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Lateral epitaxial overgrowth of aluminum nitride on patterned silicon carbide substrates by hydride vapor phase epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/12/10.1063/1.2716068
10.1063/1.2716068
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