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(Color) (a) Schematic cross section of the fabricated junctions. (b) STM image of the parallel junctions. The white rectangle part indicates the region for which the STM images in Fig. 2 and the curves in Fig. 3 were acquired.
(Color) STM images of the junction region indicated in Fig. 1(b) at (a) , and (b) , . The line markers on the upper and lower edges demarcate the boundaries of the depletion region deduced from the measurements shown in Fig. 3. The insets show the magnified images of the and regions, where white and black arrows indicate the subsurface acceptor and donor atoms, respectively. A number of bright small dots indicated by green arrows are attributed to the dangling bonds that remain after desorption of hydrogen atoms from the surface (Ref. 2).
(Color) (a) Averaged curves for -type (red), depletion (green), and -type (blue) regions. (b) Onset voltages for the tunnel current obtained from the averaged curves. (c) Averaged topographic line profiles obtained from the same regions where the curves were acquired. The red curve is for and and the blue curve is for and .
(Color) Electron energy band diagrams for a Si-vacuum-tip system with different substrate doping types under positive and negative sample bias voltages. The blue curves denote the conduction-band and valence-band edges modified by the presence of an acceptor, while the red curves denote the edges modified by a donor; the original curves are black. and are the Fermi levels of the Si substrate and the tip, respectively.
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