1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Simultaneous measurement of potential and dopant atom distributions on wet-prepared Si(111):H surfaces by scanning tunneling microscopy
Rent:
Rent this article for
USD
10.1063/1.2716837
/content/aip/journal/apl/90/12/10.1063/1.2716837
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/12/10.1063/1.2716837
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color) (a) Schematic cross section of the fabricated junctions. (b) STM image of the parallel junctions. The white rectangle part indicates the region for which the STM images in Fig. 2 and the curves in Fig. 3 were acquired.

Image of FIG. 2.
FIG. 2.

(Color) STM images of the junction region indicated in Fig. 1(b) at (a) , and (b) , . The line markers on the upper and lower edges demarcate the boundaries of the depletion region deduced from the measurements shown in Fig. 3. The insets show the magnified images of the and regions, where white and black arrows indicate the subsurface acceptor and donor atoms, respectively. A number of bright small dots indicated by green arrows are attributed to the dangling bonds that remain after desorption of hydrogen atoms from the surface (Ref. 2).

Image of FIG. 3.
FIG. 3.

(Color) (a) Averaged curves for -type (red), depletion (green), and -type (blue) regions. (b) Onset voltages for the tunnel current obtained from the averaged curves. (c) Averaged topographic line profiles obtained from the same regions where the curves were acquired. The red curve is for and and the blue curve is for and .

Image of FIG. 4.
FIG. 4.

(Color) Electron energy band diagrams for a Si-vacuum-tip system with different substrate doping types under positive and negative sample bias voltages. The blue curves denote the conduction-band and valence-band edges modified by the presence of an acceptor, while the red curves denote the edges modified by a donor; the original curves are black. and are the Fermi levels of the Si substrate and the tip, respectively.

Loading

Article metrics loading...

/content/aip/journal/apl/90/12/10.1063/1.2716837
2007-03-23
2014-04-20
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Simultaneous measurement of potential and dopant atom distributions on wet-prepared Si(111):H surfaces by scanning tunneling microscopy
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/12/10.1063/1.2716837
10.1063/1.2716837
SEARCH_EXPAND_ITEM