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Conduction band offset for systems with the ground state transition at
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10.1063/1.2716366
/content/aip/journal/apl/90/13/10.1063/1.2716366
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/13/10.1063/1.2716366
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Room temperature CER spectra (thin solid lines) of (a) S1, (b) S2, and (c) S3 structures together with fitting curves (thick solid lines) and the modulus of the individual lines (dashed lines).

Image of FIG. 2.
FIG. 2.

Band lineup for system. The conduction band offset is defined for unstrained materials as marked in this figure (see also Refs. 5–7).

Image of FIG. 3.
FIG. 3.

Comparison of theoretical calculations (solid curves) with experimental data (horizontal dashed lines) for (a) S1, (b) S2, and (c) S3 structures.

Image of FIG. 4.
FIG. 4.

Relations between the for the interface and and interfaces. It is assumed after Refs. 9 and 17 that for the interface is 80% with 5% accuracy (see horizontal dashed lines). In general, the conduction band offset at the interface can vary for the three samples since the N concentration in the quantum well increases from to . However, the expected changes should be much smaller than 5%. The conduction band offset for interfaces is treated as an unknown parameter in this case.

Image of FIG. 5.
FIG. 5.

Band gap discontinuities for samples S1, S2, and S3 structures [ systems with different N contents ( and ) as a function of N concentration in GaNAs barriers].

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/content/aip/journal/apl/90/13/10.1063/1.2716366
2007-03-27
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Conduction band offset for Ga0.62In0.38NxAs0.991−xSb0.009∕GaNyAs1−y∕GaAs systems with the ground state transition at 1.5–1.65μm
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/13/10.1063/1.2716366
10.1063/1.2716366
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