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Room temperature CER spectra (thin solid lines) of (a) S1, (b) S2, and (c) S3 structures together with fitting curves (thick solid lines) and the modulus of the individual lines (dashed lines).
Band lineup for system. The conduction band offset is defined for unstrained materials as marked in this figure (see also Refs. 5–7).
Comparison of theoretical calculations (solid curves) with experimental data (horizontal dashed lines) for (a) S1, (b) S2, and (c) S3 structures.
Relations between the for the interface and and interfaces. It is assumed after Refs. 9 and 17 that for the interface is 80% with 5% accuracy (see horizontal dashed lines). In general, the conduction band offset at the interface can vary for the three samples since the N concentration in the quantum well increases from to . However, the expected changes should be much smaller than 5%. The conduction band offset for interfaces is treated as an unknown parameter in this case.
Band gap discontinuities for samples S1, S2, and S3 structures [ systems with different N contents ( and ) as a function of N concentration in GaNAs barriers].
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