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Photoluminescence of Si-rich silicon nitride: Defect-related states and silicon nanoclusters
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10.1063/1.2717014
/content/aip/journal/apl/90/13/10.1063/1.2717014
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/13/10.1063/1.2717014
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Si XPS spectra of annealed SRN films with different excess Si concentrations. The peaks at 99.5 and are related to elemental Si and , respectively.

Image of FIG. 2.
FIG. 2.

Raman spectra of the SRN films annealed at . The inset shows the HRTEM micrograph of a Si nanocluster in N3 films after annealing. The Si nanocluster seems partially crystallized with a darker image and lattice fringes in the upper part.

Image of FIG. 3.
FIG. 3.

Smoothed PL spectra of the as-deposited SRN films (up) and the annealed ones (down), excited by line. All the PL spectra were composed of two groups of the PL bands located around 410 and , respectively.

Image of FIG. 4.
FIG. 4.

Smoothed PL spectra of the annealed SRN films excited by line. The raw PL data of N1 were also shown. The PL peaks of SRN films redshift with the increase of the excess Si concentration.

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/content/aip/journal/apl/90/13/10.1063/1.2717014
2007-03-26
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Photoluminescence of Si-rich silicon nitride: Defect-related states and silicon nanoclusters
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/13/10.1063/1.2717014
10.1063/1.2717014
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