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Hysteresis and threshold voltage shift of pentacene thin-film transistors and inverters with gate dielectric
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10.1063/1.2717015
/content/aip/journal/apl/90/13/10.1063/1.2717015
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/13/10.1063/1.2717015
/content/aip/journal/apl/90/13/10.1063/1.2717015
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/content/aip/journal/apl/90/13/10.1063/1.2717015
2007-03-26
2014-09-01
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Hysteresis and threshold voltage shift of pentacene thin-film transistors and inverters with Al2O3 gate dielectric
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/13/10.1063/1.2717015
10.1063/1.2717015
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