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Hysteresis and threshold voltage shift of pentacene thin-film transistors and inverters with gate dielectric
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10.1063/1.2717015
/content/aip/journal/apl/90/13/10.1063/1.2717015
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/13/10.1063/1.2717015
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Hysteresis in the transfer characteristics of the OTFT with the changes of (a) the scan range of negative and (b) .

Image of FIG. 2.
FIG. 2.

Hysteresis in the transfer characteristics of the OTFT when was swept from and back to in vacuum.

Image of FIG. 3.
FIG. 3.

(a) Shift of transfer characteristics after gate-bias stress or drain-bias stress for 1, 3, 5, and and (b) the amount of shift as a function of bias stress time.

Image of FIG. 4.
FIG. 4.

Hysteresis in the voltage transfer characteristics of (a) the inverter and (b) the inverter when was swept from and back to , and was fixed at .

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/content/aip/journal/apl/90/13/10.1063/1.2717015
2007-03-26
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Hysteresis and threshold voltage shift of pentacene thin-film transistors and inverters with Al2O3 gate dielectric
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/13/10.1063/1.2717015
10.1063/1.2717015
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