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Observation of a P-associated defect in nanolayers on (100)Si by electron spin resonance
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10.1063/1.2435337
/content/aip/journal/apl/90/14/10.1063/1.2435337
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/14/10.1063/1.2435337

Figures

Image of FIG. 1.
FIG. 1.

Typical high-power (saturation) second harmonic mode - (upper curve) and -band spectra observed at 25 and , respectively, in P implanted films on Si subjected to postdeposition heating in and subsequent vuv irradiation. The signal at stems from a comounted Si:P marker sample.

Image of FIG. 2.
FIG. 2.

First derivative of the high-power second harmonic -band spectrum observed in P implanted films on Si subjected to PDA in and subsequent vuv irradiation. The dashed curve represents the simulation obtained using the matrix and hf tensor values listed in Table I.

Image of FIG. 3.
FIG. 3.

Proposed conceptual model for the trapping-induced formation of the ESR-active defect in , where twofold coordination of O atoms has formally been adopted.

Tables

Generic image for table
Table I.

Comparison of the ESR spin Hamiltonian spectral parameters of the defect in different environments. The MO wave function coefficients were calculated using and (cf. Ref. 4). Estimated accuracies on inferred and values are and , respectively.

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/content/aip/journal/apl/90/14/10.1063/1.2435337
2007-04-05
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Observation of a P-associated defect in HfO2 nanolayers on (100)Si by electron spin resonance
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/14/10.1063/1.2435337
10.1063/1.2435337
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