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(Color online) Magnetic-field-dependent resistance (a) and capacitance (b) of the magnetic tunnel junction (MTJ) with thick MgO barrier layer at various temperatures. Inset shows the circuit equivalent of the MTJ.
Real (close/open circle) and imaginary (close/open square) impedances as a function of frequency at for the parallel (close circle/square) and antiparallel (open circle/square) orientations of the magnetizations of the FM electrodes of the MTJ with different MgO layer thicknesses. The solid lines are the fit to the data as described in the text.
Room temperature tunneling magnetoresistance (TMR) and tunneling magnetoconductance (TMC) as a function of frequency of MTJs with different MgO layer thicknesses.
Inverse capacitance for parallel and antiparallel orientations of the magnetizations of the FM electrodes of the MTJ with different MgO layer thicknesses. The solid lines are the linear fit. Inset shows the modified equivalent circuit of the MTJ including an interface capacitance.
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