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Frequency-dependent magnetoresistance and magnetocapacitance properties of magnetic tunnel junctions with MgO tunnel barrier
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10.1063/1.2719032
/content/aip/journal/apl/90/14/10.1063/1.2719032
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/14/10.1063/1.2719032
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Magnetic-field-dependent resistance (a) and capacitance (b) of the magnetic tunnel junction (MTJ) with thick MgO barrier layer at various temperatures. Inset shows the circuit equivalent of the MTJ.

Image of FIG. 2.
FIG. 2.

Real (close/open circle) and imaginary (close/open square) impedances as a function of frequency at for the parallel (close circle/square) and antiparallel (open circle/square) orientations of the magnetizations of the FM electrodes of the MTJ with different MgO layer thicknesses. The solid lines are the fit to the data as described in the text.

Image of FIG. 3.
FIG. 3.

Room temperature tunneling magnetoresistance (TMR) and tunneling magnetoconductance (TMC) as a function of frequency of MTJs with different MgO layer thicknesses.

Image of FIG. 4.
FIG. 4.

Inverse capacitance for parallel and antiparallel orientations of the magnetizations of the FM electrodes of the MTJ with different MgO layer thicknesses. The solid lines are the linear fit. Inset shows the modified equivalent circuit of the MTJ including an interface capacitance.

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/content/aip/journal/apl/90/14/10.1063/1.2719032
2007-04-04
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Frequency-dependent magnetoresistance and magnetocapacitance properties of magnetic tunnel junctions with MgO tunnel barrier
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/14/10.1063/1.2719032
10.1063/1.2719032
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