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Ohmic contacts to -type Mg-doped epitaxial layers
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10.1063/1.2719150
/content/aip/journal/apl/90/14/10.1063/1.2719150
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/14/10.1063/1.2719150
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Influence of annealing temperature on the current-voltage characteristics from (a) and (b) contacts to . The inset shows characteristics of sample annealed at .

Image of FIG. 2.
FIG. 2.

Influence of annealing temperature (bottom scale) and measurement temperature (top scale) on the specific contact resistance of contacts.

Image of FIG. 3.
FIG. 3.

(Color online) Surface morphology of contacts: (a) as deposited, (b) after annealing, (c) after annealing, and (d) after annealing.

Image of FIG. 4.
FIG. 4.

(Color online) AES depth profiles from (a) as-deposited and (b) annealed contacts.

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/content/aip/journal/apl/90/14/10.1063/1.2719150
2007-04-02
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ni∕Au Ohmic contacts to p-type Mg-doped CuCrO2 epitaxial layers
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/14/10.1063/1.2719150
10.1063/1.2719150
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