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Anomalous microphotoluminescence of high-aspect-ratio Si nanopillars formatted by dry-etching Si substrate with self-aggregated Ni nanodot mask
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10.1063/1.2719152
/content/aip/journal/apl/90/14/10.1063/1.2719152
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/14/10.1063/1.2719152
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) SEM image of Ni nanodots precipitated from the evaporated Ni film on with different film thicknesses.

Image of FIG. 2.
FIG. 2.

SEM image of Si nanopillars formed after ICP-RIE with different rf/bias power recipes.

Image of FIG. 3.
FIG. 3.

Density and average diameter of Si nanopillars on the Si substrate as a function of rf/bias power ratio in the ICP-RIE system.

Image of FIG. 4.
FIG. 4.

(Color online) (a) Micro-PL spectrum of as-made Si nanopillar array. (b) Normalized PL spectra of unprocessed pure Si wafer and etched Si nanopillar. (c) Si nanopillar-related PL and pure Si PL specta. (d) PL spectra of etched Si nanopillars.

Image of FIG. 5.
FIG. 5.

(Color online) Peak wavelength of Si nanopillars as a function of rod size. Inset: Plan-view SEM picture of etched Si nanopillars.

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/content/aip/journal/apl/90/14/10.1063/1.2719152
2007-04-02
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Anomalous microphotoluminescence of high-aspect-ratio Si nanopillars formatted by dry-etching Si substrate with self-aggregated Ni nanodot mask
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/14/10.1063/1.2719152
10.1063/1.2719152
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