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Characterization of the Schottky barrier in junctions
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10.1063/1.2719157
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Affiliations:
1 Department of Advanced Materials Science, University of Tokyo, Kashiwa, Chiba 277-8561, Japan
a) Electronic mail: kk47114@mail.ecc.u-tokyo.ac.jp
b) Also at Japan Science and Technology Agency, Kawaguchi 332-0012, Japan.
Appl. Phys. Lett. 90, 143507 (2007)
/content/aip/journal/apl/90/14/10.1063/1.2719157
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/14/10.1063/1.2719157
View: Figures

## Figures

FIG. 1.

Current-voltage characteristics for junctions at room temperature. Circles (triangles) denote .

FIG. 2.

(a) Internal photoemission spectra of junctions at room temperature. The square root of the photoyield is plotted against the photon energy. (b) Magnified spectra of the junctions, where the solid lines denote the linear extrapolations used to extract the barrier height.

FIG. 3.

Capacitance-voltage characteristics of junctions plotted as vs voltage. For , the solid line denotes the linear extrapolation used to extract . For , the solid line denotes the quadratic fit used to extract (see text for details).

/content/aip/journal/apl/90/14/10.1063/1.2719157
2007-04-03
2014-04-23

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