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High current density heterojunction field-effect transistor with a gate dielectric layer
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10.1063/1.2719223
/content/aip/journal/apl/90/14/10.1063/1.2719223
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/14/10.1063/1.2719223
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Cross section of the MISHFET grown on the Si (111) substrate. The hatched region between AlN and Si(111) represents an ultrathin layer formed by plasma nitridation prior to the growth of III-nitride layers. (b) Micrograph of the fabricated MISHFET.

Image of FIG. 2.
FIG. 2.

Measured dc current-voltage characteristics of the MISHFET.

Image of FIG. 3.
FIG. 3.

Off-state breakdown characteristics of the MISHFET.

Image of FIG. 4.
FIG. 4.

Gate leakage currents as a function of under different gate biases of the MISHFET.

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/content/aip/journal/apl/90/14/10.1063/1.2719223
2007-04-05
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: High current density InN∕AlN heterojunction field-effect transistor with a SiNx gate dielectric layer
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/14/10.1063/1.2719223
10.1063/1.2719223
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