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(a) Cross section of the MISHFET grown on the Si (111) substrate. The hatched region between AlN and Si(111) represents an ultrathin layer formed by plasma nitridation prior to the growth of III-nitride layers. (b) Micrograph of the fabricated MISHFET.
Measured dc current-voltage characteristics of the MISHFET.
Off-state breakdown characteristics of the MISHFET.
Gate leakage currents as a function of under different gate biases of the MISHFET.
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