1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Enhancement of ballistic transport in an high electron mobility transistor at low temperatures
Rent:
Rent this article for
USD
10.1063/1.2719231
/content/aip/journal/apl/90/14/10.1063/1.2719231
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/14/10.1063/1.2719231
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Temperature dependence of the drain current in the linear region for different . (∎: , 엯: , ▴: at , and ◻: at ). The insets shows the characteristics for various gate voltages, ( step) at .

Image of FIG. 2.
FIG. 2.

Temperature dependence of the layer and the carrier mean free path. The top inset shows potential profiles along the channel and corresponding layers at (dash) and (solid). The bottom inset shows self-consistently calculated conduction band profiles. The potential profile is calculated with a 2D charge density of obtained from the Hall measurement. For , is calculated to be . The quasi-Fermi energy level (, dotted line) and the first and second wave functions in the well are also shown.

Image of FIG. 3.
FIG. 3.

Temperature dependence of the transmission coefficient at for various drain voltages.

Loading

Article metrics loading...

/content/aip/journal/apl/90/14/10.1063/1.2719231
2007-04-02
2014-04-16
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Enhancement of ballistic transport in an AlGaAs∕InGaAs high electron mobility transistor at low temperatures
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/14/10.1063/1.2719231
10.1063/1.2719231
SEARCH_EXPAND_ITEM