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Reversal of forward voltage drift in diodes via low temperature annealing
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View: Figures


Image of FIG. 1.
FIG. 1.

EL image of D30R (a) prior to stressing, (b) following 12 consecutive, stressing intervals at , and (c) following of annealing at . All three images were acquired via the injection of for a period of .

Image of FIG. 2.
FIG. 2.

(Color online) (a) Pulsed traces acquired following four consecutive cycles of of stressing at (blue lines) and the subsequent of annealing at (red lines). While all four traces for both stressing and annealing are presented due to the repeatability in the process causing a large overlap between the traces, the traces are relatively indistinguishable. (b) Consecutive traces taken following incremental, , current injections and (c) following the subsequent annealings at for a succession of intervals of variable times. The annealing times starting from the initial trace at the bottom of the green arrow were 0, 5, 5, 7.5, 7.5, 10, 10, 10, 10, 10, 15, 15, 15, 20, 40, 60, 240, 480, 960, and . Shown in red is the trace following a subsequent anneal at to ensure that the annealing was completed; this trace overlaps the final annealing trace. (d) Time-dependent changes in at during the stresses (blue squares) and annealings (red circles) presented in (b) and (c), respectively. The green, curved arrows in (b) and (c) present the general trend in the shift with stressing and annealing, respectively.

Image of FIG. 3.
FIG. 3.

(Color online) (a) EL image of D30R taken following 90 consecutive injections of for each and (b) taken following of annealing at . The red ellipses in (b) encircle regions of a typical SSF shapes that occurred during the annealing. The ellipses in (a) mark the corresponding areas for comparison.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Reversal of forward voltage drift in 4H-SiCp-i-n diodes via low temperature annealing