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Low-threshold terahertz Si:As laser
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10.1063/1.2720271
/content/aip/journal/apl/90/14/10.1063/1.2720271
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/14/10.1063/1.2720271
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Calculated energies of several lower excited states of the As donor in silicon as a function of a compressive force applied along the [100] crystal axis (upper graph). The state notations are from Ref. 14. The thin downward arrows indicate resonant coupling of donor states with intervalley phonons. The bold downward arrows represent laser transitions. The lower graph shows the output power of Si:As lasers as a function of the applied stress. The pump power density is .

Image of FIG. 2.
FIG. 2.

(Color online) Si:As laser pump thresholds at different stress values (shown on the bottom, sample S, ).

Image of FIG. 3.
FIG. 3.

(Color online) Si:As laser emission spectra taken at different stress values (shown on the right, sample B, ). The output power of the different spectra is not to scale. The insets on the left depict the corresponding laser schemes. The donor state and transition notations are the same as in Fig. 1.

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/content/aip/journal/apl/90/14/10.1063/1.2720271
2007-04-05
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low-threshold terahertz Si:As laser
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/14/10.1063/1.2720271
10.1063/1.2720271
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