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Relationship between flux pinning and microstructure in thin films with columnar grains formed by molecular beam epitaxy
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View: Figures


Image of FIG. 1.
FIG. 1.

Schematic of film deposition based on MBE. Magnesium (Mg) and boron (B) were respectively evaporated by an effusion cell and an electron-beam evaporator. The angle between the supply direction of element flux and the substrate plane was 45° for Mg and 75° for boron.

Image of FIG. 2.
FIG. 2.

Cross-section TEM images of thin films: (a) film and (b) film . In both films, columnar grain growth of can be observed. In film , the columnar grains grew at a right angle with respect to the substrate plane. In film , the growth of columnar grains was inclined in a direction perpendicular to the substrate plane. The dashed line shows a columnar grain boundary. Similar boundaries are indicated by the arrows.

Image of FIG. 3.
FIG. 3.

Relationship between at and the angle of external magnetic field to the films: (a) film and (b) film . For film , showed a maximum value at exactly 90°. For film , the peak of was obtained at about 80°, corresponding to the growth angle of columnar grains.

Image of FIG. 4.
FIG. 4.

Magnetic field dependence of at for films in a magnetic field (a) parallel and (b) perpendicular to the film plane. (a) With a parallel field, of both films (films and ) showed similar dependence on magnetic field. (b) However, with a perpendicular field, for film showed higher values than those for film .


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Scitation: Relationship between flux pinning and microstructure in MgB2 thin films with columnar grains formed by molecular beam epitaxy