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Fabrication of gate insulator stack for Ge metal-insulator-semiconductor structures by electron-cyclotron-resonance plasma nitridation and sputtering deposition techniques
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10.1063/1.2720345
/content/aip/journal/apl/90/14/10.1063/1.2720345
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/14/10.1063/1.2720345
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Schematic cross-sectional view of electron-cyclotron-resonance plasma irradiation system equipped with sputtering deposition system.

Image of FIG. 2.
FIG. 2.

X-ray photoelectron spectroscopy spectra of structure: (a) N and (b) Ge .

Image of FIG. 3.
FIG. 3.

characteristics of MIS capacitors: (a) as prepared and (b) after annealing in ambient.

Image of FIG. 4.
FIG. 4.

characteristics of MIS capacitor at before (엯) and after (▵) subtraction of series resistance due to substrate and probing contact resistances. Low-frequency simulation result is shown by a solid line.

Image of FIG. 5.
FIG. 5.

Gate bias dependence of interface trap density in inversion region.

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/content/aip/journal/apl/90/14/10.1063/1.2720345
2007-04-05
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fabrication of Ta2O5∕GeNx gate insulator stack for Ge metal-insulator-semiconductor structures by electron-cyclotron-resonance plasma nitridation and sputtering deposition techniques
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/14/10.1063/1.2720345
10.1063/1.2720345
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