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Schematic cross-sectional view of electron-cyclotron-resonance plasma irradiation system equipped with sputtering deposition system.
X-ray photoelectron spectroscopy spectra of structure: (a) N and (b) Ge .
characteristics of MIS capacitors: (a) as prepared and (b) after annealing in ambient.
characteristics of MIS capacitor at before (엯) and after (▵) subtraction of series resistance due to substrate and probing contact resistances. Low-frequency simulation result is shown by a solid line.
Gate bias dependence of interface trap density in inversion region.
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