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Fabrication of gate insulator stack for Ge metal-insulator-semiconductor structures by electron-cyclotron-resonance plasma nitridation and sputtering deposition techniques
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10.1063/1.2720345
/content/aip/journal/apl/90/14/10.1063/1.2720345
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/14/10.1063/1.2720345
/content/aip/journal/apl/90/14/10.1063/1.2720345
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/content/aip/journal/apl/90/14/10.1063/1.2720345
2007-04-05
2014-07-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fabrication of Ta2O5∕GeNx gate insulator stack for Ge metal-insulator-semiconductor structures by electron-cyclotron-resonance plasma nitridation and sputtering deposition techniques
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/14/10.1063/1.2720345
10.1063/1.2720345
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