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Nitride-based near-ultraviolet light emitting diodes with meshed
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10.1063/1.2720347
/content/aip/journal/apl/90/14/10.1063/1.2720347
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/14/10.1063/1.2720347
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Cross-sectional and (b) top view schematic structure diagrams of mesh-type layer LED. Inset: The enlarged photograph of area in Fig. 1(b).

Image of FIG. 2.
FIG. 2.

RT EL spectra of the LED with (a) mesh ITO contact layer and LED (b) mesh-type layer with a dc injection current.

Image of FIG. 3.
FIG. 3.

characteristics of LEDs with (a) mesh ITO contact layer and (b) mesh-type layer.

Image of FIG. 4.
FIG. 4.

characteristics of LEDs with (a) mesh ITO contact layer and (b) mesh-type layer.

Image of FIG. 5.
FIG. 5.

Beam patterns of LEDs with (a) mesh ITO contact layer and (b) mesh-type layer.

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/content/aip/journal/apl/90/14/10.1063/1.2720347
2007-04-05
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nitride-based near-ultraviolet light emitting diodes with meshed p‐GaN
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/14/10.1063/1.2720347
10.1063/1.2720347
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