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Negative small-signal impedance of nanoscale GaN diodes in the terahertz frequency regime
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10.1063/1.2720758
/content/aip/journal/apl/90/14/10.1063/1.2720758
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/14/10.1063/1.2720758
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Distributions of (a) electric field and (b) drift velocity in a GaN diode at different values of : curve 1, 1.0; curve 2, 1.5; curve 3, 2.1; and curve 4, 2.5. The dash-dotted line indicates the threshold field .

Image of FIG. 2.
FIG. 2.

Current-voltage characteristics of a GaN nanoscale diode. The data point on the curve (marked by triangles) shows the values of and considered in Fig. 1.

Image of FIG. 3.
FIG. 3.

(Color online) Normalized real part of small-signal impedance of a GaN diode as a function of frequency for different values of : curve 1, 1.0; curve 2, 1.5; curve 3, 2.1; and curve 4, 2.5. The inset provides a magnified view of the frequency window with negative values (curve 4).

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/content/aip/journal/apl/90/14/10.1063/1.2720758
2007-04-06
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Negative small-signal impedance of nanoscale GaN diodes in the terahertz frequency regime
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/14/10.1063/1.2720758
10.1063/1.2720758
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