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Cross-sectional dark-field TEM images of InN epilayer grown at recorded with (a) and (b) , respectively.
(Color online) (a) FWHMs of scans of reflections for InN films grown at different temperatures as a function of the inclination angle of reflecting lattice planes with respect to the sample surface. Solid lines are fitted curves to extrapolate the mean twist angles at . (b) STD (solid rectangle) and ETD (solid triangle) densities as a function of growth temperature. The density of growth spiral is also shown (solid circle).
(Color online) Surface rms roughness of InN films as a function of growth temperature. AFM images of InN films grown at 420 and are shown in the inset at the left bottom and right top, respectively. The scanned areas are and (shown in the inset of AFM images).
(Color online) Electron concentration and Hall mobility of dozens of InN films as a function of FWHM of (102) InN scans. The estimated density of dangling bonds originated from ETDs is shown by the dashed line.
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