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Influence of silicon doping on vacancies and optical properties of thin films
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10.1063/1.2721132
/content/aip/journal/apl/90/15/10.1063/1.2721132
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/15/10.1063/1.2721132
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Valence annihilation parameter and high momentum annihilation parameter as a function of positron implantation energy for the investigated samples. The vertical line in the figure indicates where the mean positron implantation depth coincides with the interface between the AlGaN:Si and AlGaN. Also indicated in the figure is the typical error of the parameters.

Image of FIG. 2.
FIG. 2.

High momentum annihilation parameter in the AlGaN:Si layers as a function of Si fraction in the layers.

Image of FIG. 3.
FIG. 3.

PL spectra of an AlGaN:Si film with a ratio of . Inset: relative PL intensity as a function of the Si fraction in the layer.

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/content/aip/journal/apl/90/15/10.1063/1.2721132
2007-04-11
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of silicon doping on vacancies and optical properties of AlxGa1−xN thin films
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/15/10.1063/1.2721132
10.1063/1.2721132
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