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Tunable quaternary states in ferromagnetic semiconductor GaMnAs single layer for memory devices
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10.1063/1.2721144
/content/aip/journal/apl/90/15/10.1063/1.2721144
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/15/10.1063/1.2721144
/content/aip/journal/apl/90/15/10.1063/1.2721144
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/content/aip/journal/apl/90/15/10.1063/1.2721144
2007-04-13
2014-11-26
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Tunable quaternary states in ferromagnetic semiconductor GaMnAs single layer for memory devices
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/15/10.1063/1.2721144
10.1063/1.2721144
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