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TEM images of MOS capacitor. (a) WN2 sample and (b) DN2 sample.
High-frequency curves of the samples. The inset shows their gate-leakage current density vs gate voltage.
(Color online) AFM images of HfTiON films with (a) wet- annealing and (b) dry- annealing.
Gate-dielectric capacitance, equivalent dielectric thickness, physical thickness, flatband voltage, and dielectric-charge and interface-state densities.
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