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HREM images. [(a)–(c)] Cross-sectional images of on Si (100) substrate annealed at (a), , (b) and (c). Thickness of the interfacial layer increases, while that of layer decreases with annealing temperature. (d) Image in plan view showing nanocrystals of orthorhombic from the same sample as (c).
Recorded electron diffraction patterns from thick films. (a) SAED from annealed on Si (100) with thin interfacial layer showing polycrystalline diffraction rings from textured orthorhombic crystals. From inwards, the dark arrows mark the (2 1 1), (4 2 0), (2 3 1), (6 3 1), and (4 2 4) reflections, respectively. Amorphous DP from the film shown in inset. (b) SAED from the same sample as (a) but tilted by about 25°, showing additional (0 2 0) and arcs. (c) SAED from annealed on thick amorphous substrate, showing no preferred texture of the film. From inwards, the dark arrows indicate (2 1 0), (2 1 1), (0 2 0), (4 2 0), etc., reflections. (d) Extra diffraction ring from the ordered [from annealed film on Si (100) with thin interfacial layer] shown by arrows. Bottom part shows a comparison in the averaged intensity profiles between ordered and amorphous after subtraction of the background.
Comparison between the spacings of different phases of and our thick film annealed at . In (1), the reflection marked is the extra reflection observed upon tilting of 25°, which is not present in cubic, suggesting the structure to be orthorhombic. The missing orthorhombic reflections suggest a textured growth of nanocrystallites. Cubic reflections are indexed for reference.
List of observed spacing from annealed orthorhombic phase on Si (100) substrate. Comparison has been made with reported bulk x-ray orthorhombic data, indicating a small (1%) difference in spacings.
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