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-based avalanche photodiodes with high reproducible avalanche gain
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10.1063/1.2724926
/content/aip/journal/apl/90/16/10.1063/1.2724926
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/16/10.1063/1.2724926
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Dark current measurement data from a diameter photodetector device.

Image of FIG. 2.
FIG. 2.

(a) Transmission data from a double side polished wafer which is used in the fabrication. (b) Responsivity measurements result from a diameter device.

Image of FIG. 3.
FIG. 3.

(a) Gain measurements for a diameter device. (b) Avalanche gain extracted from the photocurrent measurements.

Image of FIG. 4.
FIG. 4.

Dark current measurement data with varying temperatures.

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/content/aip/journal/apl/90/16/10.1063/1.2724926
2007-04-17
2014-04-21
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: AlxGa1−xN-based avalanche photodiodes with high reproducible avalanche gain
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/16/10.1063/1.2724926
10.1063/1.2724926
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