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Negative bias temperature instability and Fowler-Nordheim injection in silicon oxynitride insulators
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10.1063/1.2728746
/content/aip/journal/apl/90/16/10.1063/1.2728746
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/16/10.1063/1.2728746
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

shift for MOSFETs induced (∎) by NBTI stress and (▵) by FN electron tunneling. The temperatures were for the NBTI and room temperature for the FN.

Image of FIG. 2.
FIG. 2.

(▵) shift induced by NBTI stressing in MOSFETs (∎) shift after the FN shift has been taken into account.

Image of FIG. 3.
FIG. 3.

Variation of with for (엯) as-measured NBTI stress and (●) as-measured FN. (◻) “real” NBTI after correction for the effects of FN injection present during measurement.

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/content/aip/journal/apl/90/16/10.1063/1.2728746
2007-04-20
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Negative bias temperature instability and Fowler-Nordheim injection in silicon oxynitride insulators
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/16/10.1063/1.2728746
10.1063/1.2728746
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