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Changes in the electronic structures and optical band gap of and N-doped during phase transition
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10.1063/1.2722203
/content/aip/journal/apl/90/17/10.1063/1.2722203
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/17/10.1063/1.2722203
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

XRD results for the structural changes in GST and NGST films with nitrogen contents of (a) 0%, (b) 5%, (c) 17%, and (d) 26%.

Image of FIG. 2.
FIG. 2.

(Color online) HR-XPS spectra of (a) Ge , (b) Sb , and (c) Te of GST films which were as grown and annealed at the temperatures of 220 and .

Image of FIG. 3.
FIG. 3.

(Color online) HR-XPS spectra of Ge of NGST films with various nitrogen contents (a) as grown and (b) annealed at a temperature of .

Image of FIG. 4.
FIG. 4.

(Color online) (a) plots of GST films where the intercept of the abscissa indicates the optical band gap . (b) Changes in the optical band gap of GST and NGST films as functions of the amount of incorporated nitrogen and annealing temperature.

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/content/aip/journal/apl/90/17/10.1063/1.2722203
2007-04-26
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Changes in the electronic structures and optical band gap of Ge2Sb2Te5 and N-doped Ge2Sb2Te5 during phase transition
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/17/10.1063/1.2722203
10.1063/1.2722203
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