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Effect of gate-source and gate-drain passivation on current collapse in high-electron-mobility transistors on silicon
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10.1063/1.2730748
/content/aip/journal/apl/90/17/10.1063/1.2730748
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/17/10.1063/1.2730748
/content/aip/journal/apl/90/17/10.1063/1.2730748
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/content/aip/journal/apl/90/17/10.1063/1.2730748
2007-04-24
2014-08-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of gate-source and gate-drain Si3N4 passivation on current collapse in AlGaN∕GaN high-electron-mobility transistors on silicon
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/17/10.1063/1.2730748
10.1063/1.2730748
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