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Schematic diagram of the passivated MIS-HEMT.
(Color online) 2DEG carrier concentration vs depth profile from . The inset shows the position of 2DEG channel shifted towards the interface for AlN MIS-HEMTs.
(Color online) (a) dc measurements with and ; (b) and characteristics; (c) pulse current normalized to the dc at zero gate bias vs gate gate voltage normalized to threshold voltage.
(Color online) (a) Two terminal gate leakage measurements. Inset: reverse breakdown measurements; (b) forward characteristics.
Device parameters of passivated HEMTs and MISHEMTs on silicon.
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