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metal-insulator-semiconductor high-electron-mobility transistor on silicon substrate for high breakdown characteristics
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10.1063/1.2730751
/content/aip/journal/apl/90/17/10.1063/1.2730751
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/17/10.1063/1.2730751

Figures

Image of FIG. 1.
FIG. 1.

Schematic diagram of the passivated MIS-HEMT.

Image of FIG. 2.
FIG. 2.

(Color online) 2DEG carrier concentration vs depth profile from . The inset shows the position of 2DEG channel shifted towards the interface for AlN MIS-HEMTs.

Image of FIG. 3.
FIG. 3.

(Color online) (a) dc measurements with and ; (b) and characteristics; (c) pulse current normalized to the dc at zero gate bias vs gate gate voltage normalized to threshold voltage.

Image of FIG. 4.
FIG. 4.

(Color online) (a) Two terminal gate leakage measurements. Inset: reverse breakdown measurements; (b) forward characteristics.

Tables

Generic image for table
Table I.

Device parameters of passivated HEMTs and MISHEMTs on silicon.

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/content/aip/journal/apl/90/17/10.1063/1.2730751
2007-04-25
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: AlN∕AlGaN∕GaN metal-insulator-semiconductor high-electron-mobility transistor on 4in. silicon substrate for high breakdown characteristics
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/17/10.1063/1.2730751
10.1063/1.2730751
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