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Impact of interfacial layer control using in gate dielectric on GaAs
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10.1063/1.2732821
/content/aip/journal/apl/90/18/10.1063/1.2732821
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/18/10.1063/1.2732821
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) characteristics of GaAs MOS capacitor at for and gate stacks on -type GaAs. Cross-sectional HRTEM images of GaAs MOS capacitor with (b) and (c) gate stacks on -GaAs and TaN gate electrode. The area of MOS capacitor is .

Image of FIG. 2.
FIG. 2.

Frequency dispersion in characteristics between 10 and for (a) and (b) gate stacks.

Image of FIG. 3.
FIG. 3.

Current density-voltage characteristics of and gate stacks on -type GaAs.

Image of FIG. 4.
FIG. 4.

(Color online) XPS spectra for thin and gate stacks deposited on -GaAs and annealed at for in ambient. (a) Hf and (b) As spectra for . (c) Hf and (d) As spectra for gate stacks. Spectra were recorded using radiation and a take-off angle of 30°.

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/content/aip/journal/apl/90/18/10.1063/1.2732821
2007-05-02
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Impact of interfacial layer control using Gd2O3 in HfO2 gate dielectric on GaAs
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/18/10.1063/1.2732821
10.1063/1.2732821
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