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Capacitively induced high mobility two-dimensional electron gas in undoped heterostructures with atomic-layer-deposited dielectric
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10.1063/1.2736273
/content/aip/journal/apl/90/18/10.1063/1.2736273
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/18/10.1063/1.2736273
/content/aip/journal/apl/90/18/10.1063/1.2736273
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/content/aip/journal/apl/90/18/10.1063/1.2736273
2007-05-03
2015-03-03
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Capacitively induced high mobility two-dimensional electron gas in undoped Si∕Si1−xGex heterostructures with atomic-layer-deposited dielectric
http://aip.metastore.ingenta.com/content/aip/journal/apl/90/18/10.1063/1.2736273
10.1063/1.2736273
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