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Characterization and optoelectronic properties of -type N-doped films
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Image of FIG. 1.
FIG. 1.

X-ray diffraction spectra of films corresponding to various processing conditions: (a) representing the as-deposited films and the annealed film of the (b) undoped, (c) N doped, and (d) N doped.

Image of FIG. 2.
FIG. 2.

N XPS spectra of N-doped films deposited at processing condition of gas ratio, (a) before film annealing, and (b) after film annealing.

Image of FIG. 3.
FIG. 3.

Plots of vs (where denotes the absorption coefficient and denotes the energy of the photon) for evaluation of direct band gap values for the film materials corresponding to (a) undoped, (b) N doped, and (c) N doped N-doped annealed films.

Image of FIG. 4.
FIG. 4.

Schematics showing the electronic band structure for the annealed N-doped , where denotes the energy at the conduction band edge, denotes the Fermi energy level, denotes the acceptor energy level, and denotes the energy at the valence band edge.


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Table I.

Compositions of the undoped and the nitrogen-doped films as determined from XPS measurements.

Generic image for table
Table II.

Optical direct band gap values and the results of Hall effect measurements of the annealed crystalline films corresponding to the undoped and the nitrogen-doped conditions. The N is the carrier concentration, Rh is the Hall coefficient, is the Hall mobility, and is the electrical conductivity.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Characterization and optoelectronic properties of p-type N-doped CuAlO2 films